cystech electronics corp. spec. no. : c168q8 issued date : 2016.11.18 revised date : 2016.11.22 page no. : 1/9 MTB028N10QNCQ8 cystek product specification n-channel enhancement mode power mosfet MTB028N10QNCQ8 bv dss 100v 6.6a i d @ t a =25 c, v gs =10v r ds(on) @v gs =10v, i d =4a 19.3 m (typ) features r ds(on) @v gs =4.5v, i d =3a 27.0m (typ) ? single drive requirement ? low on-resistance ? fast switching characteristic ? repetitive avalanche rated ? pb-free & halogen-free package symbol outline MTB028N10QNCQ8 sop-8 d d d d g g gate d drain ssource s nc n c : not connecte d s pin 1 ordering information device package shipping sop-8 (rohs compliant & halogen-free package) 2500 pcs / tape & reel MTB028N10QNCQ8-0-t3-g environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pcs / tape & reel, 13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c168q8 issued date : 2016.11.18 revised date : 2016.11.22 page no. : 2/9 MTB028N10QNCQ8 cystek product specification absolute maximum ratings (tc=25 c, unless otherwise noted) parameter symbol limits unit drain-source voltage v ds 100 gate-source voltage v gs 20 v continuous drain current @ t a =25 c, v gs =10v 6.6 continuous drain current @ t a =70 c, v gs =10v i d 5.3 pulsed drain current i dm 30 *1 avalanche current @ l=0.1mh i as 30 a avalanche energy @ l=1mh, i d =16a, v dd =25v e as 128 *3 repetitive avalanche energy @ l=0.05mh e ar 1.6 *2 mj t a =25 c 3.1 total power dissipation t a =70 c p d 2 w operating junction and storage temperature tj, tstg -55~+150 c note : *1 . pulse width limited by maximum junction temperature *2. duty cycle 1% *3. 100% tested by conditions of l=0.5mh, i as =10a, v gs =10v, v dd =25v thermal data parameter symbol value unit thermal resistance, junction-to-case r jc 20 thermal resistance, junction-to-ambient (note) r ja 40 c/w note : 40c / w when mounted on a 1 in 2 pad of 2 oz copper, t 10s; 125 c/w when mounted on minimum pad. characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 100 - - v gs =0v, i d =250 a v gs(th) 1.2 - 2.7 v v ds = v gs , i d =250 a g fs - 10.6 - s v ds =10v, i d =5a i gss - - 2 100 na v gs = 2 20v - - 1 v ds =80v, v gs =0v i dss - - 25 a v ds =80v, v gs =0v, tj=125 c - 19.3 25 v gs =10v, i d =4a *r ds(on) - 27.0 36 m v gs =4.5v, i d =3a dynamic qg *1, 2 - 28 - qgs *1, 2 - 2.2 - qgd *1, 2 - 13.6 - nc v ds =80v, v gs =10v, i d =4a ciss - 637 - coss - 90 - crss - 81 - pf v ds =50v, v gs =0v, f=1mhz
cystech electronics corp. spec. no. : c168q8 issued date : 2016.11.18 revised date : 2016.11.22 page no. : 3/9 MTB028N10QNCQ8 cystek product specification characteristics (cont. t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions dynamic t d(on) *1, 2 - 10.4 - tr *1, 2 - 22.8 - t d(off) *1, 2 - 40.4 - t f *1, 2 - 23.2 - ns v ds =50v, i d =1a, v gs =10v, r gs =6 rg - 1.5 - f=1mhz source-drain diode ratings and characteristics i s *1 - - 6.6 i sm *3 - - 30 a v sd *1 - 0.76 1.2 v i s =2a, v gs =0v trr - 27.1 - ns qrr - 23.5 - nc i f =2a, di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature. recommended soldering footprint
cystech electronics corp. spec. no. : c168q8 issued date : 2016.11.18 revised date : 2016.11.22 page no. : 4/9 MTB028N10QNCQ8 cystek product specification typical characteristics typical output characteristics 0 5 10 15 20 25 30 0246810 v ds , drain-source voltage(v) i d , drain current(a) 10v,9v,8v,7v,6v,5v,4v v gs =3v 3. 5v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =4.5v v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1.0 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 60 70 80 90 100 024681 0 drain-source on-state resistance vs junction tempearture 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =4a r ds( on) @tj=25c : 19.3m typ. v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =4a
cystech electronics corp. spec. no. : c168q8 issued date : 2016.11.18 revised date : 2016.11.22 page no. : 5/9 MTB028N10QNCQ8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0 5 10 15 20 25 30 35 40 45 50 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss f=1mhz threshold voltage vs junction tempearture 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) pulsed ta=25c v ds =15v v ds =10v gate charge characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =4a v ds =80v v ds =20v v ds =50v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) dc 100ms 1s 10ms 100 s 1ms r ds( on) limited t a =25c, tj=150c v gs =10v,r ja =40c/w single pulse maximum drain current vs junction temperature 0 2 4 6 8 10 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c,r ja =40c/w,v gs =10v
cystech electronics corp. spec. no. : c168q8 issued date : 2016.11.18 revised date : 2016.11.22 page no. : 6/9 MTB028N10QNCQ8 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 5 10 15 20 25 30 00.511.522.533.544.55 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v single pulse power rating, junction to ambient (note on page 2) 0 50 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =40c/w transient thermal response curves 0.001 0.01 0.1 1 10 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =40c/w
cystech electronics corp. spec. no. : c168q8 issued date : 2016.11.18 revised date : 2016.11.22 page no. : 7/9 MTB028N10QNCQ8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c168q8 issued date : 2016.11.18 revised date : 2016.11.22 page no. : 8/9 MTB028N10QNCQ8 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c168q8 issued date : 2016.11.18 revised date : 2016.11.22 page no. : 9/9 MTB028N10QNCQ8 cystek product specification sop-8 dimension 8-lead sop-8 plastic package cystek packa g e code: q8 date code device name b028n 10qnc date code(counting from left to right) : 1 st code: year code, the last digit of christian year 2 nd code : month code, jan a, feb b, mar c, apr d may e, jun f, jul g, a u g h, sep j, oct k, nov l, dec m 3 rd and 4 th codes : prodcution serial number, 01~99 marking: millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 1.350 1.750 0.053 0.069 e 3.800 4.000 0.150 0.157 a1 0.100 0.250 0.004 0.010 e1 5.800 6.200 0.228 0.244 a2 1.350 1.550 0.053 0.061 e 1.270 (bsc) 0.050 (bsc) b 0.330 0.510 0.013 0.020 l 0.400 1.270 0.016 0.050 c 0.170 0.250 0.006 0.010 0 8 0 8 d 4.700 5.100 0.185 0.200 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
|
